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  inchange semiconductor product specification silicon npn power transistors BU508AFI description ? ? with to-3pml package ? high voltage ? high speed switching applications ? for use in horizontal deflection of colour tv receivers pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1500 v v ceo collector-emitter voltage open base 700 v v ebo emitter-base voltage open collector 10 v i c collector current (dc) 8 a i cp collector current (pulse) 15 a p tot total power dissipation t c =25 ?? 50 w t j max.operating junction temperature 150 ?? t stg storage temperature -65~150 ?? thermal characteristics symbol parameter max unit r th j-c thermal resistance junction case 2.5 ??/w fig.1 simplified outline (to-3pml) and symbol
inchange semiconductor product specification 2 silicon npn power transistors BU508AFI characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =100ma ;i b =0, 700 v v (br)ebo emitter-base breakdown voltage i e =10ma ;i c =0 10 v v cesat collector-emitter saturation voltage i c =4.5a ;i b =2 a 1.0 v v besat base-emitter saturation voltage i c =4.5a ;i b =2 a 1.3 v h fe dc current gain i c =1a; v ce =5v 8 i ces collector cut-off current v ce =1500v ; v be =0 t c =125 ?? 1.0 2.0 ma i ebo emitter cut-off current v eb =5v; i c =0 0.1 ma f t transition frequency i c =0.1a; v ce =5v;f=5mhz 7 mhz t s storage time 7 | s t f fall time i c =4.5a ; v cc =140v i b =1.8a; l c =0.9mh l b =3 | h 0.55 | s
inchange semiconductor product specification 3 silicon npn power transistors BU508AFI package outline fig.2 outline dimensions


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